sg4 0t 12 0db discrete igbts symbol test conditions maximum ratings unit continuous transient 20 30 v v ges v gem v ge =15v; t vj =125 o c; r g =5 clamped inductive load icm=120 @ 0.8 v ces a ssoa (rbsoa) t j t jm t stg -55...+150 150 -55...+150 o c weight 6 m d mounting torque (m3) 1.13/10 nm/ib.in. g v ces v cgr t j =25 o c to 150 o c t j =25 o c to 150 o c; r ge =1 m ; 1200 1200 v g=gate, c=collector, e=emitter,tab=collector tc=25 o c; limited by leads tc=100 o c tc=25 o c, 1 ms 60 40 180 a i c25 ic100 i cm p c t c =25 o c maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s maximum tab temperature for soldering smd devices for 10s 300 o c 300 w s y m b o l t e s t c o n d i t i o n s u n i t m i n . t y p . m a x . b v c e s i c =1ma; v g e = 0 v 120 0 v v g e ( t h ) i c =750ua; v ce =v ge 5.0 6.5 v i c e s v c e =v c e s ; t j = 2 5 o c 250 v g e = 0 v ; t j = 1 2 5 o c 4 i g e s v c e = 0 v ; v g e =2 0 v 200 n a v c e ( s a t ) ic=ic90 ; vge=15v v u a c h a r a c t e r i s t i c v a l u e s ( t j = 2 5 o c , u n l e s s o t h e r w i s e s p e c i f i e d ) SG40T120DB dimensions to-247ad dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 ma 260 o c sirectifier typical 5.8 2.7 2.9 igbt v ces = 1200v i c100 = 40a v ce(sat) 2.9v t fi(typ) = 60 ns p1 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
s y m b o l t e s t c o n d i t i o n s u n i t m i n . t y p . m a x . g t s i c = i c 9 0 ; v c e = 1 0 v 33 44 s p u l s e t e s t , t 3 0 0 u s , d u t y c y c l e 2 % c i e s 8000 c o e s v c e = 2 5 v ; v g e = 0 v ; f = 1 m h z 200 p f c r e s q g 170 q g e i c = i c 9 0 ; v g e = 1 5 v ; v c e = 0 . 5 v c e s 28 n c q g c 57 t d ( o n ) i n d u c t i v e l o a d , t j = 2 5 o c n s t r i i c = i c 9 0 ; v g e = 1 5 v ; n s v c e =0.8v ces' ; r g = r o f f =5 t d( o f f ) r e m a r k s : s w i t c h i n g t i m e s m a y i n c r e a s e 340 400 n s t f i f o r v c e ( c l a m p ) 0 . 8 v c e s ' h i g h e r t j o r 60 90 n s e o f f i n c r e a s e d r g 2 2.5 m j t d ( o n ) i n d u c t i v e l o a d , t j =12 5 o c 68 n s t r i i c = i c 9 0 ; v g e = 1 5 v ; n s e o n v c e =0.8v ces' ; r g = r o f f =5 m j t d ( o f f ) r e m a r k s : s w i t c h i n g t i m e s m a y i n c r e a s e 0 n s t f i f o r v c e ( c l a m p ) 0 . 8 v c e s ' h i g h e r t j o r 160 n s e o f f i n c r e a s e d r g 2.5 m j r t h j c 0.42 k / w r t h c k 0 .25 k / w ( t j = 2 5 o c , u n l e s s o t h e r w i s e s p e c i f i e d ) c h a r a c t e r i s t i c v a l u e s i c(on) v ge =10v; v c e = 1 0 v 220 a sg4 0t 12 0db discrete igbts 2.9 2.9 reverse diode (fred) symbol test conditions unit characteristic values min. typ. max. v f if=40a; tvj=150 o c 2.9 v t vj =25 o c 3.3 i rm vr=100v; if=40a; -dif/dt=100a/us l 0.05uh; t vj=100 o c 12 a t rr i f =1a; -di/dt=50a/us; v r =30v; t j =25 o c 40 ns r thjc diode 1.2 k/w (t j =25 o c , unless otherwise specified) 1.1 p2 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
sg4 0t 12 0db discrete igbts figure 1. maximum collector current as a function of case temperature ( v ge 15v, t j 150c) features advantages trench field stop igbt technology ? l ow switching losses ? s witching frequency up to 30 khz ? s quare rbsoa, no latch up ? h igh short circuit capability ? p ositive temperature coeffcient for easy parallelling ? mos input, voltage controlled ? u ltra fast free wheeling diodes ? application ? ac servo and robot drives ? power supplies ? welding inverters and weight savings ? reduced protection ? space circuits ac and dc motor control ? figure 2. typical capacitance as a function of collector-emitter voltage (v ge =0v, f = 1 mhz) c iss c oss c rss p3 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
sg4 0t 12 0db discrete igbts figure 4. collector current as a function of switching frequency (t j 150c, d = 0.5, v ce = 600v, v ge = 0/+15v, r g = 12) figure 5. maximum power dissipation as a function of case temperature ( t j 150c) t c =80 t c =110 figure 3. typical transfer characteristic (v ce =15v) figure 6. typical output characteristic (t j = 25c) p4 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
sg4 0t 12 0db discrete igbts figure 7 . typical output characteristic (t j = 150c) figure 8. typical switching times as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =12, dynamic test circuit in figure d) figure 9 . typical switching times as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =40a, dynamic test circuit in figure d) figure 1 0 . typical switching energy losses as a function of collector current (inductive load, t j =150c, v ce =600v, v ge =0/15v, r g =12, dynamic test circuit in figure d) p5 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
sg4 0t 12 0db discrete igbts figure 11. typical switching energy losses as a function of gate resistor (inductive load, t j =150c, v ce =600v, v ge =0/15v, i c =40a, dynamic test circuit in figure d) figure a. definition of switching times figure b. definition of switching losses figure d. dynamic test circuit l d.u.t (igbt) d.u.t (diode) u figure c. definition of diodes switching characteristics p6 ? 2016 sirectifier all rights reserved www.sirectifier.com tel: +86-519-86800000 fax: +86-519-88019019 e-mail:: sales@sirectifier.com
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